INGAASP LASER WITH HIGH TO

被引：5

作者：

DUTTA, NK

WRIGHT, PD

NELSON, RJ

WILSON, RB

BESOMI, PR

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 10期

关键词：

D O I：

10.1109/JQE.1982.1071430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1414 / 1416

页数：3

共 11 条

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[5]

DUTTA NK, P I PHYSICS C SERIES, V56, P193

[6]

DUTTA NK, 1980, SEP P INT S GAAS REL

[7] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

HORIKOSHI, Y ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :809-815

[8] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J].

NELSON, RJ ;

WILSON, RB ;

WRIGHT, PD ;

BARNES, PA ;

DUTTA, NK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :202-207

[9] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD [J].

SUGIMURA, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :627-635

[10]

TAMARI N, 1982, APR TOP M OPT FIB CO

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