MEASUREMENTS OF THRESHOLD CARRIER DENSITY OF III-V SEMICONDUCTOR-LASER DIODES

被引：10

作者：

SU, CB

OLSHANSKY, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：856 / 858

页数：3

相关论文

共 6 条

[1] CASEY HC, 1978, HETEROSTRUCTURE LA B
[2] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS
DIXON, RW
JOYCE, WB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4591 - 4595
[3] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING
PETERMANN, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 566 - 570
[4] MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS
SU, CB
SCHLAFER, J
MANNING, J
OLSHANSKY, R
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 595 - 596
[5] MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3-MU-INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERS
SU, CB
SCHLAFER, J
MANNING, J
OLSHANSKY, R
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1108 - 1110
[6] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES
SU, CB
OLSHANSKY, R
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835