SMALL-SIGNAL AND CONTINUOUS WAVE OPERATION OF THE LATERAL CURRENT INJECTION HETEROSTRUCTURE FIELD-EFFECT LASER

被引:6
作者
EVALDSSON, PA [1 ]
TAYLOR, GW [1 ]
COOKE, P [1 ]
CLAISSE, PR [1 ]
BURRUS, CA [1 ]
TELL, B [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.107215
中图分类号
O59 [应用物理学];
学科分类号
摘要
The lateral current injection heterostructure field-effect laser structure is operated both as a three-terminal laser and a field-effect transistor. The structure was grown by low-temperature molecular-beam epitaxy (580-degrees-C) and excellent performance characteristics were obtained for both devices. The laser is shown to have both source/emitter and source/collector modes of operation. Both modes exhibited a continuous wave operation and the source/emitter mode has a - 3 dB bandwidth of 4 GHz limited by heating caused by a high source resistance. The transistor had a peak transconductance of 95 mS/mm and a peak drain to source current density of 120 mA/mm for a 2-mu-m X 50-mu-m device.
引用
收藏
页码:1697 / 1699
页数:3
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