OPTICAL AND RF CHARACTERISTICS OF SHORT-CAVITY-LENGTH MULTIQUANTUM-WELL STRAINED-LAYER LASERS

被引：11

作者：

LESTER, LF ^{[1
]}

SCHAFF, WJ ^{[1
]}

SONG, X ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 12期

关键词：

D O I：

10.1109/68.117996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-cavity-length strained-layer lasers with four In0.3Ga0.7As quantum wells have been fabricated using chemically assisted ion beam etching (CAIBE). These lasers have a very low K factor of 0.14 ns and a high differential gain of 1.1 x 10(-15) cm2. A 3 dB modulation bandwidth of 23.5 GHz has been measured on a 50-mu-m cavity-length device. This is the highest reported bandwidth for a quantum well laser.

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页码：1049 / 1051

页数：3

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