HIGH-SPEED MODULATION OF INGAAS-GAAS STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：10

作者：

LESTER, LF ^{[1
]}

SCHAFF, WJ ^{[1
]}

OFFSEY, SD ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graded-index separate-confinement heterostructure (GRINSCH) strained-layer laser with five In0.3Ga0.7As quantum wells have been fabricated with cavity lengths from 50 to 400-mu-m using chemically assisted ion-beam etching (CAIBE) to form the laser mirrors. The dry-etching process is thermally assisted, which gives a very reproducible etching rate. A minimum threshold-current value is observed at a cavity length of 50-mu-m, showing that the multiquantum-well design is optimum for short-cavity lasers. Finally a relaxation oscillation frequency of 10 GHz and a - 3 dB bandwidth of 15 GHz have been measured on a 200 x 10-mu-m mesa-structure device.

引用

页码：403 / 405

页数：3

共 11 条

[1] EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].