THE RELATION OF DOPING LEVEL TO K FACTOR AND THE EFFECT ON ULTIMATE MODULATION PERFORMANCE OF SEMICONDUCTOR-LASERS

被引：17

作者：

EOM, J ^{[1
]}

SU, CB ^{[1
]}

LACOURSE, JS ^{[1
]}

LAUER, RB ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期

关键词：

D O I：

10.1109/68.60761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, K, which is the ratio of the damping factor γ to the square of the resonance frequency fO2, is shown to depend on the doping level for bulk semiconductor lasers. Since the differential gain is known to depend on the doping level in the active layer, K also depends on the differential gain. © 1990 IEEE

引用

页码：692 / 694

页数：3

共 6 条

[1] THEORY AND EXPERIMENT OF THE PARASITIC-FREE FREQUENCY-RESPONSE MEASUREMENT TECHNIQUE USING FACET-PUMPED OPTICAL MODULATION IN SEMICONDUCTOR DIODE-LASERS
LANGE, CH
SU, CB
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1704 - 1706
[2] UNIVERSAL RELATIONSHIP BETWEEN RESONANT-FREQUENCY AND DAMPING RATE OF 1.3 MU-M INGAASP SEMICONDUCTOR-LASERS
OLSHANSKY, R
HILL, P
LANZISERA, V
POWAZINIK, W
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 653 - 655
[3] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
OLSHANSKY, R
HILL, P
LANZISERA, V
POWAZINIK, W
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) : 1410 - 1418
[4] ULTRA-HIGH-SPEED MODULATION OF 1.3-MU-M INGAASP DIODE-LASERS
SU, CB
LANZISERA, VA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1568 - 1578
[5] EFFECT OF DOPING LEVEL ON THE GAIN CONSTANT AND MODULATION BANDWIDTH OF INGAASP SEMICONDUCTOR-LASERS
SU, CB
LANZISERA, V
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1302 - 1304
[6] PROPOSAL ON REDUCING THE DAMPING CONSTANT IN SEMICONDUCTOR-LASERS BY USING QUANTUM WELL STRUCTURES
UOMI, K
CHINONE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1424 - L1425

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