Characterization of new aromatic polymers for 157 nm photoresist applications

被引：24

作者：

Fender, N ^{[1
]}

Brock, PJ ^{[1
]}

Chau, W ^{[1
]}

Bangsaruntip, S ^{[1
]}

Mahorowala, A ^{[1
]}

Wallraff, GM ^{[1
]}

Hinsberg, WD ^{[1
]}

Larson, CE ^{[1
]}

Ito, H ^{[1
]}

Breyta, G ^{[1
]}

Burnham, K ^{[1
]}

Truong, H ^{[1
]}

Lawson, P ^{[1
]}

Allen, RD ^{[1
]}

机构：

[1] IBM Corp, Div Res, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷

关键词：

157; nm; acid diffusion; solvent retention; aromatic fluorinated resists;

D O I：

10.1117/12.436873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is currently tremendous interest in developing 157 nm photoresists for imaging applications at 100 nm and below, Due to the high VUV absorbance of the polymers used in 248 and 193 photoresists new materials are being investigated for applications at 157 nm. In this report the characterization of a number of partially fluorinated polymers based on aromatic backbones will be described. Data on the absorbance, dissolution properties, solvent retention and acid diffusion characteristics of these systems will be presented.

引用

页码：417 / 427

页数：11

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