Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor)

被引：48

作者：

Awais, Muhammad Naeem ^{[1
]}

Muhammad, Nauman Malik ^{[1
]}

Navaneethan, Duraisamy ^{[1
]}

Kim, Hyung Chan ^{[2
]}

Jo, Jeongdai ^{[3
]}

Choi, Kyung Hyun ^{[1
]}

机构：

[1] Jeju Natl Univ, Dept Mech Engn, Cheju, South Korea

[2] Jeju Natl Univ, Dept Elect Engn, Cheju, South Korea

[3] Korea Inst Machinery & Mat, Taejon, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 103卷

基金：

新加坡国家研究基金会;

关键词：

Electrohydrodynamic atomization; Memristor; Printed electronics; Resistive switch; NONVOLATILE MEMORY DEVICES; FILM;

D O I：

10.1016/j.mee.2012.09.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The insulating active layer has a vital role in the MIM (Metal Insulator Metal) structure of resistive switch (memristor). Different fabrication technologies are being used to the deposition of the active layer to explore the resistive switching in metal oxides. Electrohydrodynamic atomization (EHDA) has been used in this brief to deposit an active layer for the printed resistive switch (memristor). A thin liquid jet of solution containing ZrO2 (Zirconium Dioxide) nanoparticles was generated through a metallic capillary with a constant flow rate under the electrical forces. Liquid jet was further disintegrated into small droplets, containing nanoparticles, under the influence of electrical stresses and were collected on the ITO coated PET (Polyethylene Terephthalate) to form uniform layer of ZrO2 nanoparticles. A smooth thin film was observed with an average thickness of 67 nm. Resistive (memristive) behavior was observed in the deposited thin film with ITO (Indium-Tin Oxide) as a bottom electrode and Ag as a top electrode. Bipolar reversible resistive switching was analyzed by setting different current compliances. Results reveal that EHDA has full potential to fabricate the active layer in resistive switches for printed electronics. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：167 / 172

页数：6

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