On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

被引：191

作者：

Guan, Weihua ^{[1
]}

Liu, Ming ^{[1
]}

Long, Shibing ^{[1
]}

Liu, Qi ^{[1
]}

Wang, Wei ^{[2
]}

机构：

[1] Chinese Acad Sci, Lab Nanofabricat & Novel Device Integrat, Inst Microelect, Beijing 100029, Peoples R China

[2] SUNY Albany, CNSE, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

copper; electrical resistivity; integrated memory circuits; platinum; switching; zirconium compounds;

D O I：

10.1063/1.3039079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu/ZrO2:Cu/Pt memory devices conforms to a filament formation and annihilation mechanism. Temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state (ON state). Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive bridge. On this basis, we propose that the set process (switching from OFF state to ON state) and the reset process (switching from ON to OFF state) stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

引用

页数：3

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