学术探索
学术期刊
新闻热点
数据分析
智能评审

Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films

被引：59
作者：
Lin, Chun-Chieh [1 ]
Lin, Chih-Yang
Lin, Meng-Han
Lin, Chen-Hsi
Tseng, Tseung-Yuen
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Winbond Elect Corp, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 12期
关键词：
conduction mechanism; nonvolatile memory (NVM); resistive random access memory (RRAM); resistive switching; SrZrO3; switching polarity;
D O I：
10.1109/TED.2007.908867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
引用
收藏
页码：3146 / 3151
页数：6
相关论文
共 22 条
[1]  
Baek IG, 2005, INT EL DEVICES MEET, P769
[2]   Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].
Baek, IG ;
Lee, MS ;
Seo, S ;
Lee, MJ ;
Seo, DH ;
Suh, DS ;
Park, JC ;
Park, SO ;
Kim, HS ;
Yoo, IK ;
Chung, UI ;
Moon, JT .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590
[3]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[4]  
Chen A, 2005, INT EL DEVICES MEET, P765
[5]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[6]   TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching [J].
Fujimoto, Masayuki ;
Koyama, Hiroshi ;
Konagai, Masashi ;
Hosoi, Yasunari ;
Ishihara, Kazuya ;
Ohnishi, Shigeo ;
Awaya, Nobuyoshi .
APPLIED PHYSICS LETTERS, 2006, 89 (22)
[7]   Three-terminal organic memory devices [J].
He, J ;
Ma, LP ;
Wu, JH ;
Yang, Y .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
[8]   Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].
Kim, D. C. ;
Seo, S. ;
Ahn, S. E. ;
Suh, D. -S. ;
Lee, M. J. ;
Park, B. -H. ;
Yoo, I. K. ;
Baek, I. G. ;
Kim, H. -J. ;
Yim, E. K. ;
Lee, J. E. ;
Park, S. O. ;
Kim, H. S. ;
Chung, U-In ;
Moon, J. T. ;
Ryu, B. I. .
APPLIED PHYSICS LETTERS, 2006, 88 (20)
[9]   Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide [J].
Kinoshita, K. ;
Tamura, T. ;
Aoki, M. ;
Sugiyama, Y. ;
Tanaka, H. .
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[10]   Charge-transport characteristics in bistable resistive poly (N-vinylcarbazole) films [J].
Lai, YS ;
Tu, CH ;
Kwong, DL ;
Chen, JS .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) :451-453
123