Charge-transport characteristics in bistable resistive poly (N-vinylcarbazole) films

被引:46
作者
Lai, YS [1 ]
Tu, CH
Kwong, DL
Chen, JS
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
关键词
charge transport; poly(N-vinylcarbazole) (PVK); resistance random access memory (RRAM);
D O I
10.1109/LED.2006.874762
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Charge-transport characteristics of bistable resistive poly(N-vinylcarbazole) films as a function of temperature have been investigated. It is found that the ON-state charge transport is dominated by ohmic conduction, hopping with an energy scale of the order of similar to 20 meV. The OFF-state charge transport appears to follow a transition from ohmic to space charge limited conduction with a shallow-trap distribution. Nonetheless, the poly(N-vinylcarbazole) (PVK) film does not possess its memory characteristics when operated at temperatures higher than 410 K. The PVK film can be operated at low voltage (< 2 V) with a high on/off current ratio as large as 10(6).
引用
收藏
页码:451 / 453
页数:3
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