Resistive switching memory effect of ZrO2 films with Zr+ implanted

被引：184

作者：

Liu, Qi ^{[1
]}

Guan, Weihua ^{[1
]}

Long, Shibing ^{[1
]}

Jia, Rui ^{[1
]}

Liu, Ming ^{[1
]}

Chen, Junning ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Dev Integrated Technol, Beijing 100029, Peoples R China

[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2832660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Au/Cr/Zr+-implanted-ZrO2/n(+)-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R-ratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction. (C) 2008 American Institute of Physics.

引用

页数：3

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