Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures

被引：105

作者：

Kim, Kyung Min ^{[1
]}

Choi, Byung Joon

Koo, Bon Wook

Choi, Seol

Jeong, Doo Seok

Hwang, Cheol Seong

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 12期

关键词：

D O I：

10.1149/1.2353899

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electric-pulse-induced resistive switching properties of TiO2, Al2O3, Al2O3/TiO2, and Al2O3/TiO2/Al2O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2O3 films show random variations during repeated I-V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected. (c) 2006 The Electrochemical Society.

引用

页码：G343 / G346

页数：4

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