Switching characteristics of Cu2O metal-insulator-metal resistive memory

被引：126

作者：

Chen, A. ^{[1
]}

Haddad, S. ^{[1
]}

Wu, Y. C. ^{[1
]}

Lan, Z. ^{[1
]}

Fang, T. N. ^{[1
]}

Kaza, S. ^{[1
]}

机构：

[1] Spansion LLC, Adv Memory Dev Grp, Sunnyvale, CA 94088 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.2789678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Cu2O metal-insulator-metal (MIM) resistive switching memory was characterized on a 64 kb memory test array. The switching properties are consistent with the proposed switching model of conductivity modulation by a charge trapping process. Retention, programing characteristics, and temperature effects are analyzed based on the switching model. The measured characteristics and the switching model for Cu2O MIM are compared with those of other resistive switching materials. The statistical characteristics provide essential evidence for analysis of the switching mechanism and evaluation of the memory devices. (c) 2007 American Institute of Physics.

引用

页数：3

共 17 条

[1]

[Anonymous], UNPUB

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3]

Chen A, 2005, INT EL DEVICES MEET, P765

[4] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[5] Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films -: art. no. 0729030 [J].

Jeong, DS ;

Park, HB ;

Hwang, CS .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[6] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[7] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide [J].

Kinoshita, K. ;

Tamura, T. ;

Aoki, M. ;

Sugiyama, Y. ;

Tanaka, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[8]

Lampert M. A., 1970, CURRENT INJECTION SO

[9] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications [J].

Lee, D ;

Choi, H ;

Sim, H ;

Choi, D ;

Hwang, H ;

Lee, MJ ;

Seo, SA ;

Yoo, IK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :719-721

[10] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

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