Gain dependence of the noise in the single electron transistor

被引：42

作者：

Starmark, B ^{[1
]}

Henning, T

Claeson, T

Delsing, P

Korotkov, AN

机构：

[1] Univ Gothenburg, Dept Microelect & Neurosci, S-41296 Gothenburg, Sweden

[2] Chalmers, S-41296 Gothenburg, Sweden

[3] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.371020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not primarily due to resistance fluctuations. For one sample, we find a low minimum charge noise of q(n) approximate to 2 x 10(-5) e/root Hz at a frequency of 4.4 kHz. (C) 1999 American Institute of Physics. [S0021-8979(99)05815-6].

引用

页码：2132 / 2136

页数：5

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