Thick and large area PIN diodes for hard X-ray astronomy

被引：15

作者：

Ota, N

Murakami, T

Sugizaki, M

Kaneda, H

Tamura, T

Ozawa, H

Kamae, T

Makishima, K

Takahashi, T

Tashiro, M

Fukazawa, Y

Kataoka, J

Yamaoka, K

Kubo, S

Tanihata, C

Uchiyama, Y

Matsuzaki, K

Iyomoto, N

Kokubun, M

Nakazawa, T

Kubota, A

Mizuno, T

Matsumoto, Y

Isobe, N

Terada, Y

Sugiho, M

Onishi, T

Kubo, H

Ikeda, H

Nomachi, M

Ohsugi, T

Muramatsu, M

Akahori, H

机构：

[1] ISAS, Kanagawa 2298510, Japan

[2] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[3] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1520033, Japan

[4] High Energy Accelerator Res Org, Tsukuba, Ibaraki 305, Japan

[5] Osaka Univ, Nucl Phys Res Ctr, Osaka 5670047, Japan

[6] Hiroshima Univ, Dept Phys, Hiroshima 7398526, Japan

[7] Hamamatsu Photon Co Ltd, Shizuoka 4358558, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 436卷 / 1-2期

关键词：

thick; SiPIN diode; Na contamination; hard X-ray astronomy;

D O I：

10.1016/S0168-9002(99)00636-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm(2) in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：291 / 296

页数：6

共 12 条

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