Program, erase and retention times of thin-oxide Flash-EEPROMs

被引：3

作者：

Iannaccone, G ^{[1
]}

Gennai, S ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informazione, I-56126 Pisa, Italy

来源：

VLSI DESIGN | 2001年 / 13卷 / 1-4期

关键词：

thin-oxide; retention times; CHE; Schrodinger equation;

D O I：

10.1155/2001/62583

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present an investigation of the process of charging and discharging of the floating gate of thin oxide Flash EEPROMs based on a fully quantum mechanical approach to transport in the vertical direction. Our approach allows us to compute program, erase, and retention times as a function of the gate stack structure, and applied voltages.

引用

页码：431 / 434

页数：4