Flash memory cells - An overview

被引:527
作者
Pavan, P
Bez, R
Olivo, P
Zanoni, E
机构
[1] SGS THOMSON MICROELECT,CENT RES & DEV,I-20041 AGRATE BRIANZA,MI,ITALY
[2] UNIV FERRARA,DIPARTIMENTO ENGN,I-44100 FERRARA,ITALY
[3] UNIV PADUA,DIPARTIMENTO ELETTRON & INFORMAT,I-35131 PADUA,ITALY
关键词
charge carrier processes; read-only memory; semi-conductor memory;
D O I
10.1109/5.622505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual Flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the Flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories.
引用
收藏
页码:1248 / 1271
页数:24
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