Multiple wavelength vertical-cavity laser array employing molecular beam epitaxy regrowth

被引:12
作者
Wipiejewski, T [1 ]
Ko, J [1 ]
Thibeault, BJ [1 ]
Coldren, LA [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
关键词
vertical cavity surface emitting lasers; semiconductor junction lasers;
D O I
10.1049/el:19960198
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiple wavelength 4 x 2 vertical-cavity laser diode arrays with 30 mu m pitch exhibit a 17nm wavelength span. The wavelength distribution is arbitrary within the 2-D array. The laser elements feature singlemode emission with submilliamp threshold currents.
引用
收藏
页码:340 / 342
页数:3
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