Spectromicroscopic evidence of Ge-GaSe chemical reactions: Not a Schottky system

被引：9

作者：

Almeida, J ^{[1
]}

Vobornik, I ^{[1
]}

Berger, H ^{[1
]}

Kiskinova, M ^{[1
]}

Kolmakov, A ^{[1
]}

Marsi, M ^{[1
]}

Margaritondo, G ^{[1
]}

机构：

[1] SINCROTRONE TRIESTE, I-34012 TRIESTE, ITALY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.55.R4899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoelectron-spectromicroscopy experiments unexpectedly revealed a reacted phase for Ge overlayers on GaSe. This finding is in sharp contrast with the notion that this interface is an ideal Schottky system, whose band discontinuities, for example, are determined by the Anderson rule-and with the widespread belief that most III-VI-based interfaces behave like Schottky systems. After this result, to the best of our knowledge, no heterojunction is known that matches the requisites of an ideal Schottky system.

引用

页码：R4899 / R4902

页数：4

共 14 条

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