GASE-GE AND GASE-SI - 2 POSSIBLE EXAMPLES OF SCHOTTKY-LIKE BEHAVIOR OF HETEROJUNCTION INTERFACES

被引：19

作者：

DANIELS, RR

MARGARITONDO, G

QUARESIMA, C

PERFETTI, P

LEVY, F

机构：

[1] INST STRUTTURA MAT,FRASCATI,ITALY

[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[3] ECOLE POLYTECH FED LAUSANNE,PHYS APPL LAB,CH-1007 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573369

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：979 / 980

页数：2

共 17 条

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