The growth and modification of materials via ion-surface processing

被引:100
作者
Hanley, L [1 ]
Sinnott, SB
机构
[1] Univ Illinois, Dept Chem, Chicago, IL 60607 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
ion-solid interactions; growth; ion etching; ion bombardment; ion implantation; sputtering; computer simulations; molecular dynamics;
D O I
10.1016/S0039-6028(01)01528-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A wide variety of gas phase ions with kinetic energies from 1-10(7) eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion surface modification promises considerable scientific and technological advances in the new millennium. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:500 / 522
页数:23
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