Epitaxial growth of metals with high Ehrlich-Schwoebel barriers and the effect of surfactants

被引：23

作者：

Camarero, J

Cros, V

Capitán, MJ

Alvarez, J

Ferrer, S

Niño, MA

Prieto, JE

Gómez, L

Ferrón, J

de Parga, ALV

Gallego, JM

de Miguel, JJ

Miranda, R

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[4] Inst Fis Rosario, RA-2000 Rosario, Argentina

[5] Univ Nacl Litoral, INTEC, CONICET, RA-3000 Santa Fe, Argentina

[6] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 05期

关键词：

D O I：

10.1007/s003390051469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interlayer diffusion in epitaxial systems with a high energy barrier at the atomic steps - the so-called Ehrlich-Schwoebel (ES) barrier - is strongly reduced. As a consequence of this, a continuous accumulation of roughness takes place during growth. This undesirable effect can be corrected by using surfactant agents. We have studied the influence of the ES barrier on the preparation of epitaxial films on Cu(111), and the surfactant effect of a monolayer of Pb.

引用

页码：553 / 557

页数：5

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