Ultrafast dephasing of continuum transitions in bulk semiconductors

被引：16

作者：

Arlt, S ^{[1
]}

Siegner, U ^{[1
]}

Kunde, J ^{[1
]}

Morier-Genoud, F ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] ETH Honggerberg HPT, Inst Quantum Elect, Swiss Fed Inst Technol, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.59.14860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the coherent emission from bulk semiconductors by spectrally resolved and spectrally integrated four-wave mixing (FWM) with broadband 16-fs pulses in the carrier density range from x 10(16) cm(-3) to 6 x 10(17) cm(-3), in GaAs, only continuum transitions are excited, while both excitonic and continuum transitions are excited in Al0.06Ga0.94As. The decay of the FWM signal for positive time delays unambiguously reflects the dephasing of the continuum, irrespective of the excitation of excitonic transitions. We find identical ultrafast sub-20-fs decay times of the coherent emission from continuum transitions in GaAs and Al0.06Ga0.94As, independent of the excess excitation energy. These decay times depend only weakly on the carrier density for densities below 10(17) cm(-3). The continuum dephasing is analyzed considering carrier-carrier and carrier-LO-phonon scattering in a relaxation rate approach. The excitonic transitions in Al0.06Ga0.94As dominate the FWM signal at negative time delays.

引用

页码：14860 / 14863

页数：4

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