Anthra[2,3-b]benzo[d]thiophene:: An air-stable asymmetric organic semiconductor with high mobility at room temperature

被引：66

作者：

Du, Chunyan ^{[1
,2
]}

Guo, Yunlong ^{[1
,2
]}

Liu, Yunqi ^{[1
]}

Qiu, Wenfeng ^{[1
]}

Zhang, Hengjun ^{[1
,2
]}

Gao, Xike ^{[1
,2
]}

Liu, Ying ^{[1
,2
]}

Qi, Ting ^{[1
,2
]}

Lu, Kun ^{[1
,2
]}

Yu, Gui ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100190, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 13期

关键词：

D O I：

10.1021/cm801305f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Anthra[2,3-b]benzo[d]thiophene (ABT), an air-stable asymmetric organic semiconductor with high mobility at room temperature, was synthesized in a three step process, and its single crystal structure and electrical property were studied. Crystals of ABT, suitable for single-crystal X-ray diffraction (XRD) studies, were grown from toluene and hexane solutions. The UV-vis spectrum of the vacuum-deposited ABT thin film reveals an absorption maximum at 468 nm, and it is about 33 nm red-shifted compared with that in CH2Cl2 solution. The HOMO level of ABT, estimated from the onset oxidation potential relative to vacuum is -5.35 eV, which is about 0.75 eV lower than that of pentacene. ABT is also found to possess high mobility and good air stability so that it can be used for transistor applications.

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页码：4188 / 4190

页数：3

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