Direct correlation of organic semiconductor film structure to field-effect mobility

被引：70

作者：

DeLongchamp, DM ^{[1
]}

Sambasivan, S

Fischer, DA

Lin, EK

Chang, P

Murphy, AR

Fréchet, JMJ

Subramanian, V

机构：

[1] Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA

[2] Natl Inst Stand & Technol, Div Ceram, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 19期

关键词：

D O I：

10.1002/adma.200500263

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Near-edge X-ray fine structure spectroscopy is used to measure simultaneous chemical conversion, molecular ordering, and defect formation in soluble oligothiophene precursor films. Film structure is correlated to OFET performance. Molecular orientation is determined by evaluating antibonding orbital overlap with the polarized electric field vector of incident soft X-rays (see Figure and cover). Upon conversion, the molecules become vertically oriented, allowing a overlap in the plane of hole transport.

引用

页码：2340 / +

页数：6

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