The influence of quantum effects on the determination of gate oxide thickness from C-V measurements

被引：3

作者：

Dmowski, K ^{[1
]}

Halimaoui, A ^{[1
]}

机构：

[1] WARSAW UNIV TECHNOL,INST MICRO & OPTOELECT,PL-00662 WARSAW,POLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1997年 / 216卷

关键词：

D O I：

10.1016/S0022-3093(97)00124-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A modified method to determine the ultra-thin oxide thickness from the measured high-frequency capacitance as a function of voltage C(V) data of a metal-oxide-semiconductor (MOS) capacitor with a polysilicon gate is described. It is based on a numerical solution of the Poisson equation and takes into account a first order correction for quantum mechanical effects. The maximum-minimum capacitance method is used to determine the average doping concentration in the substrate. The doping concentration in the polysilicon gate is determined by fitting experimental C-V data for an MOS transistor to simulated ones. (C) 1997 Elsevier Science B.V.

引用

页码：185 / 191

页数：7

共 13 条

[1]

Arora N., 1993, MOSFET MODELS VLSI C

[2]

DEAL BE, 1965, J ELECTROCHEM SOC, V112

[3] INVESTIGATION OF THE PHYSICAL MODELING OF THE GATE-DEPLETION EFFECT [J].

HABAS, P ;

FARICELLI, JV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1496-1500

[4] ON THE EFFECT OF NONDEGENERATE DOPING OF POLYSILICON GATE IN THIN OXIDE MOS-DEVICES ANALYTICAL MODELING [J].

HABAS, P ;

SELBERHERR, S .

SOLID-STATE ELECTRONICS, 1990, 33 (12) :1539-1544

[5]

HANTSCH W, 1989, SOLID STATE ELECT, V32, P839

[6] DETERMINING EFFECTIVE DIELECTRIC THICKNESSES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES IN ACCUMULATION-MODE [J].

HU, CY ;

KENCKE, DL ;

BANERJEE, S ;

BANDYOPADHYAY, B ;

IBOK, E ;

GARG, S .

APPLIED PHYSICS LETTERS, 1995, 66 (13) :1638-1640

[7]

KLAUSMANN E, 1989, INSTABILITIES SILICO, V2

[8] A SIMPLE METHOD FOR EXTRACTING AVERAGE DOPING CONCENTRATION IN THE POLYSILICON AND SILICON SURFACE-LAYER NEAR THE OXIDE IN POLYSILICON-GATE MOS STRUCTURES [J].

LIN, WW .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (02) :51-53

[9]

NAGAI K, 1985, SOLID STATE ELECT, V28, P371

[10]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

← 1 2 →