DETERMINING EFFECTIVE DIELECTRIC THICKNESSES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES IN ACCUMULATION-MODE

被引：12

作者：

HU, CY ^{[1
]}

KENCKE, DL ^{[1
]}

BANERJEE, S ^{[1
]}

BANDYOPADHYAY, B ^{[1
]}

IBOK, E ^{[1
]}

GARG, S ^{[1
]}

机构：

[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor (MOS) capacitance-voltage (C-V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40-200 Å) on p-type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined]] effective dielectric thicknesses" in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (<80 Å). The effective dielectric thicknesses at oxide electric fields of 2-6 MV/cm have been determined to be 2-3 Å larger for the quantum mechanical case than for the classical case.

引用

页码：1638 / 1640

页数：3

共 7 条

[1]

Ando T., 1982, REV MOD PHYS, V54, P438

[2] DETERMINATION OF MOS OXIDE CAPACITANCE [J].