Carbon-doped boron nitride cold cathodes

被引:85
作者
Pryor, RW
机构
[1] Institute for Manufacturing Research, Wayne State University, Detroit
关键词
D O I
10.1063/1.116018
中图分类号
O59 [应用物理学];
学科分类号
摘要
These results reflect what is believed to be the first observation of electron emission from carbon-doped boron nitride (BN). The n-type BN films were synthesized on n-type polycrystalline diamond on (100)Si using reactive laser ablation. The electron emission current density measured at room temperature shows a power law dependence. Emission currents as high as 60 mA cm(-2) have been measured from 150 nm thick n-type BN films on a 24 mu m n-type polycrystalline diamond film on a (100)Si substrate. These films show a current density/applied field behavior indicative of negative electron affinity. (C) 1996 American Institute of Physics.
引用
收藏
页码:1802 / 1804
页数:3
相关论文
共 12 条
[1]  
CONDON EU, 1958, HANDBOOK PHYSICS, P8
[2]   DIAMOND COLD-CATHODE [J].
GEIS, MW ;
EFREMOW, NN ;
WOODHOUSE, JD ;
MCALEESE, MD ;
MARCHYWKA, M ;
SOCKER, DG ;
HOCHEDEZ, JF .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459
[3]   A SURVEY OF THE PRESENT STATUS OF VACUUM MICROELECTRONICS [J].
IANNAZZO, S .
SOLID-STATE ELECTRONICS, 1993, 36 (03) :301-320
[4]  
KITTEL C, 1976, INTRO SOLID STATE PH, P238
[5]  
LANDEE RW, 1957, ELECT DESIGNERS HDB, P2
[6]  
Modinos, 1984, FIELD THERMIONIC SEC
[7]   DIAMOND ON HETEROEPITAXIAL CBN ON SI(100) [J].
PRYOR, RW ;
PADMANABHAN, KR ;
CHAWLA, K .
DIAMOND AND RELATED MATERIALS, 1995, 4 (02) :128-132
[8]   CHARACTERIZATION OF LASER-ABLATED BORON-NITRIDE THIN-FILMS ON SILICON [J].
PRYOR, RW ;
WU, ZL ;
PADMANABHAN, KR ;
VILLANUEVA, S ;
THOMAS, RL .
THIN SOLID FILMS, 1994, 253 (1-2) :243-246
[9]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P635
[10]   COLD FIELD-EMISSION FROM CVD DIAMOND FILMS OBSERVED IN EMISSION ELECTRON-MICROSCOPY [J].
WANG, C ;
GARCIA, A ;
INGRAM, DC ;
LAKE, M ;
KORDESCH, ME .
ELECTRONICS LETTERS, 1991, 27 (16) :1459-1461