Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis

被引：27

作者：

Krost, A ^{[1
]}

Bläsing, J

Lünenbürger, M

Protzmann, H

Heuken, M

机构：

[1] Univ Magdeburg, Inst Expt Phys, D-39016 Magdeburg, Germany

[2] AIXTRON AG, D-52072 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive x-ray analysis including Theta-2 Theta scans, reciprocal space mapping, and x-ray reflectivity of 10x(InGaN/GaN) multiple quantum wells (MQWs) is presented. The layers were grown by low-pressure metal-organic chemical-vapor deposition. The strain state and the In concentration in (InGaN/GaN) MQW systems are evaluated with the help of reciprocal space maps around the symmetric (0002) and asymmetric (10 (1) over bar 5) Bragg reflections. Depending on the In incorporation, the MQW system is fully strained, partially relaxed, or exhibits phase decomposition effects. The room-temperature photoluminescence emission energy of a fully strained 10x(In0.125Ga0.875N/GaN) MQW sample is 2.792 eV, which is 133 meV less than the calculated energy gap of 2.925 eV. (C) 1999 American Institute of Physics. [S0003-6951(99)03431-2].

引用

页码：689 / 691

页数：3

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