Real-time observations of interface formation for barium strontium titanate films on silicon

被引：20

作者：

Mueller, AH

Suvorova, NA

Irene, EA

Auciello, O

Schultz, JA

机构：

[1] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA

[2] Argonne Natl Lab, Div Mat & Chem Sci, Argonne, IL 60439 USA

[3] Ionwerks Inc, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1479451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba.5Sr.5TiO3 (BST) film growth by ion sputtering on bare and thermally oxidized silicon was observed in real time using in-situ spectroscopic ellipsometry and time of flight ion scattering and recoil spectrometry techniques. At the outset of BST film deposition on silicon, an approximately 30 A film with intermediate static dielectric constant (Ksimilar to12) and refractive index (nsimilar to2.6 at photon energies of 1.5-3.25 eV) interface layer formed on bare silicon. The interface layer growth rate was greatly reduced on an oxidized silicon substrate. The results have profound implications on the static dielectric constant of BST. (C) 2002 American Institute of Physics.

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收藏

页码：3796 / 3798

页数：3

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