Structural and electrical properties of Ba0.5Sr0.5TiO3 films on Ir and IrO2 electrodes

被引:18
作者
Cho, HJ
Kang, CS
Hwang, CS
Kim, JW
Horii, H
Lee, BT
Lee, SI
Lee, MY
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 7A期
关键词
DRAM; capacitor; BST; Ir; IrO2; dielectric constant; leakage current density;
D O I
10.1143/JJAP.36.L874
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-dielectric Ba0.5Sr0.5TiO3 (BST) thin films are grown on Ir and IrO2 electrodes by a rf sputtering method. The structural and electrical properties of BST films are investigated. After postannealing at 750 degrees C for 30 min in N-2 atmosphere, the interface between BST and IrO2 remains flat and the IrO2 does not show any structural change. On the other hand, a thin IrO2 layer is formed at the interface between the BST and Ir after the same post-annealing. A larger grain size of BST film is obtained on the Ir electrode compared to that of BST him on the IrO2 electrode. Dielectric constants of 36-nm-thick BST films on Ir and IrO2 are 338 and 290, respectively. The leakage current densities of both the Pt/BST/Ir and Pt/BST/IrO2 capacitors are about 20 nA/cm(2) at +/-1.5V, which is sufficiently small for application to dynamic random access memory devices.
引用
收藏
页码:L874 / L876
页数:3
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