ELECTRICAL-PROPERTIES OF PB(ZR,TI)O-3 THIN-FILM CAPACITORS ON PT AND IR ELECTRODES

被引：68

作者：

NAKAMURA, T

NAKAO, Y

KAMISAWA, A

TAKASU, H

机构：

[1] ROHM Co, Ukyo-ku, 615

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

FERROELECTRIC THIN FILMS; IR; PT IRO2; SOL-GEL METHOD; IMPRINT CHARACTERISTICS; PB(ZI; TI)O-3;

D O I：

10.1143/JJAP.34.5184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(ZrxTi1-x)O-3 (PZT) thin films were prepared on Ir/IrO2 and Pt/IrO2 electrodes. We have already reported that fatigue properties of PZT thin films were improved by using these electrodes due to barrier effects of IrO2. In this present paper we describe a study of the imprint characteristics of PZT thin films on these electrodes. There is little difference in fatigue properties between the PZT films on Pt/IrO2 and Ir/IrO2. However, we find some difference in imprint characteristics between the PZT films on these electrodes. In the case of Ir/IrO2 electrode, improvements in the electrical properties are observed in the measurements of the imprint characteristics. Moreover, improvements in imprint characteristics were also obtained with good (111)-axis orientation of PZT films when PtxIr1-x/IrO2 electrodes were used.

引用

页码：5184 / 5187

页数：4

共 6 条

[1]

Dat R., 1994, Integrated Ferroelectrics, V5, P275, DOI 10.1080/10584589408223884

[2] EVALUATION OF IMPRINT PROPERTIES IN SOL-GEL FERROELECTRIC PB(ZRTI)O3 THIN-FILM CAPACITORS [J].