Nanotechnology for SAW devices on AlN epilayers

被引：36

作者：

Palacios, T ^{[1
]}

Calle, F

Monroy, E

Grajal, J

Eickhoff, M

Ambacher, O

Prieto, C

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, ISOM, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, ETSI Telecomunicac, Dept Senales Sistemas & Radiocomunicaciones, E-28040 Madrid, Spain

[4] Tech Univ Munich, Walter Schottky Inst, D-8000 Munich, Germany

[5] CSIC, Inst Ciencia Mat, Madrid, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

AlN; surface and bulk acoustic waves; e-beam lithography; nitride technology;

D O I：

10.1016/S0921-5107(02)00022-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hexagonal aluminum nitride (AlN) has revealed as an excellent candidate to be used as substrate for surface acoustic wave (SAW) devices. Its high SAW propagation velocity, electromechanical coupling constant and an almost negligible temperature coefficient of delay (TCD) promise the fabrication of low-cost SAW devices operating in the microwave region of the spectrum, useful under harmful environment conditions of temperature and radiation. In this paper, a revision of the excellent SAW-related characteristics of AIN grown by molecular beam epitaxy on sapphire is presented. Several technological issues related to the fabrication of high frequency ( > 1 GHz) SAW devices in this semiconductor using an e-beam lithographic system are discussed. On the other hand, design issues like the effect introduced by the generation of bulk acoustic waves (BAW) will be analyzed using a novel method based on the inverse Fourier transform. These approaches will be presented both from theoretical and experimental perspectives. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：154 / 158

页数：5

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