The intermediate high-pressure phase of silicon

被引:35
作者
Christensen, NE [1 ]
Novikov, DL
Methfessel, M
机构
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Arthur D Little Inc, Cambridge, MA 02140 USA
[3] Inst Semicond Phys, D-15230 Frankfurt, Oder, Germany
关键词
semiconductors; metals; crystal structure and symmetry; crystal binding and equation of state;
D O I
10.1016/S0038-1098(99)00120-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent X-ray diffraction experiments (M. Hanfland, U. Schwarz, K. Syassen, K. Takemura, Phys. Rev. Lett., 82 (1999) 1197) show that the intermediate high-pressure phase of Si-VI is isostructural with Cs-V. The structure is base-centered orthorhombic, space group Cmca, with 8 atoms in the primitive cell (16 in the orthorhombic unit cell, oC16). We present here ab initio calculations that include relaxations of Si in the primitive hexagonal (ph), the orthorhombic (Cmca) as well as the hexagonal close packed (hcp) structure. The force calculations confirm the atomic positions obtained by analyses of the experimental data, the calculated P-V relations for the three phases are very close to the observed isotherms, and the calculated ph --> oC16 --> hcp transition pressures, 33 +/- 2 and 41 +/- 5 GPa, agree well with experiments. A comparative calculation for Cs-V is briefly discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:615 / 619
页数:5
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