Electronic structure calculations for semiconductors under pressure

被引：25

作者：

Christensen, NE ^{[1
]}

机构：

[1] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus, Denmark

来源：

HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I | 1998年 / 54卷

关键词：

D O I：

10.1016/S0080-8784(08)60230-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：49 / 144

页数：96

共 201 条

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