Electronic structure calculations for semiconductors under pressure

被引：25

作者：

Christensen, NE ^{[1
]}

机构：

[1] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus, Denmark

来源：

HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I | 1998年 / 54卷

关键词：

D O I：

10.1016/S0080-8784(08)60230-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：49 / 144

页数：96

共 201 条

[31] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE
CARDONA, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1543 - &
[32] CORRECTION
CARDONA, M
[J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2906 - 2906
[33] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[34] PRESSURE COEFFICIENTS OF BAND-GAPS IN SEMICONDUCTORS
CHANG, KJ
FROYEN, S
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (02) : 105 - 107
[35] THEORETICAL-STUDY OF BEO - STRUCTURAL AND ELECTRONIC-PROPERTIES
CHANG, KJ
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (06) : 487 - 491
[36] ELECTRONIC-STRUCTURE OF ALN
CHING, WY
HARMON, BN
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5305 - 5308
[37] CHRENKO RM, 1974, SOLID STATE COMMUN, V14, P511, DOI 10.1016/0038-1098(74)90978-8
[38] DEFORMATION POTENTIALS OF THE VALENCE BAND EDGE IN CUBR
CHRISTENSEN, NE
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 125 (01): : K59 - K61
[39] 1ST-PRINCIPLES CALCULATION OF DEFORMATION POTENTIALS OF COPPER HALIDES
CHRISTENSEN, NE
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 123 (01): : 281 - 288
[40] 1ST-PRINCIPLES THEORY OF TETRAHEDRAL BONDING AND CRYSTAL-STRUCTURE OF LEAD
CHRISTENSEN, NE
SATPATHY, S
PAWLOWSKA, Z
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5977 - 5980