Temperature dependent photoluminescence from ZnO nanowires and nanosheets on brass substrate

被引：33

作者：

Gu, Xiuquan ^{[1
]}

Huo, Kaifu ^{[1
,2
]}

Qian, Guixiang ^{[1
]}

Fu, Jijiang ^{[1
,2
]}

Chu, Paul K. ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Wuhan Univ Sci & Technol, Coll Mat & Met, Hubei Prov Key Lab Refractories & Ceram, Minist Prov Jointly Constructed Cultivat Base Sta, Wuhan 430081, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

brass; deep levels; excitons; II-VI semiconductors; nanotechnology; nanowires; photoluminescence; semiconductor quantum wires; spectral line intensity; spectral line shift; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3033823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependent optical properties of ZnO nanosheets and nanowires fabricated on conductive brass substrates with different surface-to-volume ratios and morphologies are investigated. The near band edge and deep-level emission mechanisms are studied. The blueshifted donor bound exciton D (0)X peak and enhanced deep-level emission in the low-temperature photoluminescence spectrum of the nanosheets are due to the large surface-to-volume ratios. Although D (0)X is the dominant emission from both the nanowires and nanosheets at low temperature, the room-temperature spectra are dominated by D (0)X (nanowires) and first order longitudinal optical phonon replica of free exciton (nanosheets). The decay in the D (0)X peak intensity stems from the thermal dissociation of D (0)X to free exciton.

引用

页数：3

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