UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

被引：625

作者：

Lim, Jae-Hong ^{[1
]}

Kang, Chang-Ku ^{[1
]}

Kim, Kyoung-Kook ^{[1
]}

Park, Il-Kyu ^{[1
]}

Hwang, Dae-Kue ^{[1
]}

Park, Seong-Ju ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 20期

关键词：

D O I：

10.1002/adma.200502633

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A UV-Iight-emitting homojunction ZnO LED is grown by radiofrequency sputtering at high temperature, improving the structural, electrical, and optical properties of the n- and p-type ZnO layers. The figure shows a comparison of the electroluminescence spectra of A) a p-n homojunction ZnO LED and B) a ZnO LED with Mg0.1Zn0.9O layers used as energy barrier layers. Such materials are of interest for their potential use in long-lifetime solid-state lighting, high-density information storage, secure communication, and chemical/biological-agent monitoring.

引用

页码：2720 / +

页数：6

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