p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101

被引：295

作者：

Hwang, DK

Kang, SH

Lim, JH

Yang, EJ

Oh, JY

Yang, JH

Park, SJ ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Natl Res Lab Nanophoton Semicond, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

关键词：

D O I：

10.1063/1.1940736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p-ZnO/n-GaN. The LED structure consisted of a phosphorus doped p-ZnO film with a hole concentration of 6.68x10(17) cm(-3) and a Si-doped n-GaN film with an electron concentration of 1.1x10(18) cm(-3). The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p-ZnO which was reduced as the result of the band offset at the interface of p-ZnO and n-GaN. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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