Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

被引：432

作者：

Alivov, YI ^{[1
]}

Kalinina, EV

Cherenkov, AE

Look, DC

Ataev, BM

Omaev, AK

Chukichev, MV

Bagnall, DM

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow District, Russia

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia

[3] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[4] RAS, Daghestan Sci Ctr, Inst Phys, Makhachkala 367003, Russia

[5] Moscow MV Lomonosov State Univ, Dept Phys, Moscow, Russia

[6] Univ Southampton, Southampton SO9 5NH, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1632537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage similar to3.2 V and low reverse leakage current similar to10(-7) A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO. (C) 2003 American Institute of Physics.

引用

页码：4719 / 4721

页数：3

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