p-type behavior in phosphorus-doped (Zn,Mg)O device structures

被引：207

作者：

Heo, YW ^{[1
]}

Kwon, YW ^{[1
]}

Li, Y ^{[1
]}

Pearton, SJ ^{[1
]}

Norton, DP ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1737795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of device structures that employ phosphorus-doped (Zn,Mg)O have been examined in a effort to delineate the carrier type behavior in this material. The capacitance-voltage properties of metal/insulator/P-doped (Zn,Mg)O diode structures were measured and found to exhibit a polarity consistent with the P-doped (Zn,Mg)O layer being p type. In addition, thin-film junctions comprising n-type ZnO and P-doped (Zn,Mg)O display asymmetric I-V characteristics that are consistent with the formation of a p-n junction at the interface. Although Hall measurements of the P-doped (Zn,Mg)O thin films yielded an indeterminate Hall sign due to a small carrier mobility, these results are consistent with previous reports that phosphorus can yield an acceptor state and p-type behavior in ZnO materials. (C) 2004 American Institute of Physics.

引用

页码：3474 / 3476

页数：3

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