Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

被引：125

作者：

Ashrafi, ABMA ^{[1
]}

Suemune, I ^{[1
]}

Kumano, H ^{[1
]}

Tanaka, S ^{[1
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Optoelect Labs, Sapporo, Hokkaido 0600812, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 11B期

关键词：

H2O vapor; undoped ZnO; N doped p-ZnO; H passivation; neutral acceptor-bound exciton;

D O I：

10.1143/JJAP.41.L1281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (N-A-N-D) of similar to10(14) cm(-3), but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the N-A-N-D up to similar to5 x 10(16) cm(-3). Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

引用

页码：L1281 / L1284

页数：4

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