Fabrication of low resistivity tin-doped indium oxide films with high electron carrier densities by a plasma sputtering method

被引：11

作者：

Kono, Akihiko ^{[1
]}

Feng, Zongbao ^{[1
]}

Nouchi, Norimoto ^{[1
]}

Shoji, Fumiya ^{[1
]}

机构：

[1] Kyushu Kyoritsu Univ, Grad Sch Engn, Fukuoka 8078585, Japan

来源：

VACUUM | 2008年 / 83卷 / 03期

关键词：

Tin-doped indium oxide film; Hot-cathode plasma sputtering; Oxygen vacancy;

D O I：

10.1016/j.vacuum.2008.04.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin-doped indium oxide (ITO) films fabricated on glass substrates using a hot-cathode plasma sputtering method exhibited low resistivity of 9.7 x 10(-5) Omega cm, which is due to a high carrier density of 2.1 x 10(21) cm(-3). The change in the number of carriers, N, as a function of film thickness d, strongly suggests that oxygen extraction in the initial stages of ITO film growth on the glass substrate surface, creates oxygen vacancies as an electron carrier source for improvement in the resistivity of the films. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：548 / 551

页数：4

共 7 条

[1]

BELLINGHAM JR, 1992, J MATER SCI LETT, V11, P3

[2]

HAMBERG I, 1986, J APPL PHYS, V60, P123

[3] Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering [J].

Luo, S. N. ;

Kono, A. ;

Nouchi, N. ;

Shoji, F. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[4] INFLUENCE OF SUBSTRATE-TEMPERATURE AND FILM THICKNESS ON THE STRUCTURE OF REACTIVELY EVAPORATED IN2O3 FILMS [J].

MURANAKA, S ;

BANDO, Y ;

TAKADA, T .

THIN SOLID FILMS, 1987, 151 (03) :355-364

[5] A study of low temperature crystallization of amorphous thin film indium-tin-oxide [J].

Paine, DC ;

Whitson, T ;

Janiac, D ;

Beresford, R ;

Ow-Yang, CW ;

Lewis, B .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8445-8450

[6] ELECTRICAL AND STRUCTURAL-PROPERTIES OF LOW RESISTIVITY TIN-DOPED INDIUM OXIDE-FILMS [J].

SHIGESATO, Y ;

TAKAKI, S ;

HARANOH, T .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3356-3364

[7]

TAHAR RBH, 1998, J APPL PHYS, V83, P2361

← 1 →