Synthesis and electronic properties of ZnO/CoZnO core-shell nanowires

被引：26

作者：

Han, S ^{[1
]}

Zhang, DH ^{[1
]}

Zhou, CW ^{[1
]}

机构：

[1] Univ So Calif, Dept EE Electrophys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2187435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO/CoZnO core-shell nanowires have been synthesized by depositing an epitaxial layer of CoxZn1-xO (x=0.05-0.25) onto single-crystalline ZnO nanowires via pulsed-laser deposition. Detailed material analysis confirmed the core-shell structure and revealed a homogeneous distribution of Co atoms in the ZnO lattice. Field-effect transistors have been fabricated based on individual ZnO/CoZnO nanowires. These devices exhibited n-type transistor characteristics and intriguing magnetoresistance below 30 K.

引用

页数：3

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