Imperfect oriented attachment: Direct activation of high-temperature ferromagnetism in diluted magnetic semiconductor nanocrystals

被引:45
作者
Wang, Xuefeng [1 ]
Xu, J. B.
Ke, Ning
Yu, Jiaguo
Wang, Juan
Li, Quan
Ong, H. C.
Zhang, R.
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[3] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
关键词
D O I
10.1063/1.2208554
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a simple nonequilibrium solvothermal synthesis of Co-doped ZnO diluted magnetic semiconductor (DMS) nanocrystals. The crystal growth mechanism of imperfect three-dimensionally oriented attachment was revealed by the high-resolution transmission electron microscopy. The shallow donorlike defects as the legacy of aggregation-based growth were responsible for the observed high-temperature ferromagnetism (FM), further verifying the recent proposal. The solvothermal-treated strategy may not only offer an independent approach to directly tailor magnetic properties of advanced materials and devices at the nanoscale but also contribute to the sound understanding of the microscopic mechanism behind FM in DMSs. (c) 2006 American Institute of Physics.
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页数:3
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