Massively parallel, large-area maskless lithography

被引:15
作者
Klosner, M [1 ]
Jain, K [1 ]
机构
[1] Anvik Corp, Hawthorne, NY 10532 USA
关键词
D O I
10.1063/1.1699449
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a high-throughput scanning maskless lithography technology for patterning high-resolution features on large-area substrates. This technology, which features a spatial light modulator array and a seamless-stitching scanning technique, was used to perform imaging exposures at micron-level resolution, patterning seamlessly over exposure areas significantly larger than the field size of the projection lens. This technology is attractive for a variety of applications that currently rely on mask-based lithographic processes. (C) 2004 American Institute of Physics.
引用
收藏
页码:2880 / 2882
页数:3
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