Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition

The III-V compound semiconductors are widely used throughout the world (as well as in space) for a wide variety of electronic and optoelectronic devices. Recently, a strong research and commercial interest has developed in the use of the III-V nitrides for visible (blue and green) Light-emitting diodes and injection lasers and high-temperature electronics. The epitaxial growth of thin films and heterostructures of III-N was pioneered using the hydride vapor-phase epitaxial technique. However, in the past few years, the metalorganic chemical vapor deposition process has become the primary process for the growth of thin films of these compound semiconductors. This paper will discuss the growth of InAlGaN materials by metalorganic chemical vapor deposition.