Superconductor/semiconductor nanostructures on p-type InAs

被引：12

作者：

Chrestin, A

Kürsten, R

Biedermann, K

Matsuyama, T

Merkt, U

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 5-6期

关键词：

superconductivity; weak links; InAs nanostructures;

D O I：

10.1006/spmi.1999.0719

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent experimental results for Nb/p-type InAs/Nb Josephson junctions are reviewed. In these devices, the superconducting Nb electrodes are coupled through the native inversion layer at the surface of p-type InAs. Besides the de and ac Josephson effects, we discuss the opening of a proximity-effect induced energy gap in the density of states of the inversion layer where it is covered by Nb. In field-effect controlled devices, the short electrode separation comparable to the mean free path allows the observation of Fabry-Perot type resonances in the current-voltage characteristics. (C) 1999 Academic Press.

引用

页码：711 / 720

页数：10

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