Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method

被引：19

作者：

Kim, D ^{[1
]}

Shimomura, T ^{[1
]}

Wakaiki, S ^{[1
]}

Terashita, T ^{[1
]}

Nakayama, M ^{[1
]}

机构：

[1] Osaka City Univ, Dept Appl Phys, Grad Sch Engn, Sumiyoshi Ku, Osaka 5588585, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

ZnO; RF-magnetron sputtering; photoluminescence; P emission;

D O I：

10.1016/j.physb.2005.12.185

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated photoluminescence (PL) properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method. The X-ray-diffraction patterns indicate that the crystalline thin film is preferentially oriented along the [0001] crystal axis. By introducing a low-temperature buffer layer and by growing thin films at a high temperature of 600 degrees C, the crystal quality of ZnO thin films is markedly improved. In addition, we have found that ambience during a cooling process to room temperature after the deposition is another important factor to improve the PL properties; namely, the defect-related PL disappears and the free exciton PL with a sharp width is observed by cooling thin films in the presence of oxygen. Furthermore, under high-density excitation conditions, a PL band due to an exciton-exciton scattering process, the so-called P emission, is observed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：741 / 744

页数：4

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